FDG6301N_F085
Dual
N-Channel,
Digital FET
Typical Electrical Characteristics
( continued)
6
V
GS
, GATE-SOURCE VOLTAGE (V)
5
4
3
2
1
0
30
I
D
= 0.22A
V
DS
= 5V
10V
CAPACITANCE (pF)
15
8
5
3
2
0.1
Ciss
Coss
Crss
f = 1 MHz
V
GS
= 0 V
0.3
1
3
10
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
0.1
0.2
0.3
0.4
0.5
0.6
Q
g
, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics
.
1
IT
50
10m
s
I
D
, DRAIN CURRENT (A)
0.3
POWER (W)
S
RD
(O
N
IM
)L
10
0m
s
1s
40
30
20
10
0
0.0001
SINGLE PULSE
R
θ
JA
=415°C/W
T
A
= 25°C
0.1
0.03
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 415 °C/W
T
A
= 25°C
0.8
2
5
10
s
DC
0.01
0.4
10
25
40
0.001
0.01
0.1
1
10
200
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=415
°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.002
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
200
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
FDG6301N_F085 Rev. A
4
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