February 1999
FDG312P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
• -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V
RDS(on) = 0.25 Ω @ VGS = -2.5 V.
• Low gate charge (3.3 nC typical).
• High performance trench technology for extremely
low RDS(ON)
.
Applications
• Load switch
• Battery protection
• Power management
• Compact industry standard SC70-6 surface mount
package.
S
D
1
6
5
4
D
2
3
G
D
D
SC70-6
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
-20
V
V
A
8
±
(Note 1)
Drain Current - Continuous
- Pulsed
-1.2
-6
(Note 1a)
(Note 1b)
PD
Power Dissipation for Single Operation
0.75
0.55
W
(Note 1c)
0.48
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
θ
(Note 1)
R
Thermal Resistance, Junction-to-Ambient
260
C/W
°
JA
Package Outlines and Ordering Information
Device Marking
12
Device
Reel Size
Tape Width
Quantity
3000 units
FDG312P
7’’
8mm
.
1999 Fairchild Semiconductor Corporation
FDG312P Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
