FDD6670AL
Electrical Characteristics
(continued)
Symbol
V
SD
t
rr
Q
rr
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Test Conditions
V
GS
= 0 V,
I
S
= 3.2 A
(Note 2)
Min Typ Max Units
0.7
39
31
1.2
V
nS
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
F
= 18 A ,d
iF
/d
t
= 100 A/µs
Notes:8
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
= 40°C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
θJA
= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3.
Maximum current is calculated as:
P
D
R
DS(ON)
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
FDD6670AL Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
