FDD6670A
Electrical Characteristics
Symbol
W
DSS
I
AR
BV
DSS
∆
BV
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
(Note 2)
Test Conditions
Min
Typ
Max Units
400
66
mJ
A
V
Drain-Source Avalanche ratings
Single Pulse Drain-Source
V
DD
= 15 V, I
D
= 66 A
Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
(Note 2)
Off Characteristics
V
GS
= 0 V, I
D
= 250
µ
A
I
D
= 250
µ
A, Referenced to 25
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
30
25
1
100
-100
mV/
°
C
µ
A
nA
nA
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µ
A
I
D
= 250
µ
A, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A,T
J
=125
°
C
V
GS
= 4.5 V, I
D
=13 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 12 A
1
1.6
-4
0.0065
0.0090
0.0085
3
V
mV/
°
C
0.008
0.013
0.010
Ω
I
D(on)
g
FS
50
55
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
3200
820
400
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Ω
15
15
85
42
27
27
105
68
50
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V, I
D
= 15 A,
V
GS
= 5 V,
35
9
16
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
2.3
0.72
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
= 40oC/W when mounted
on a 1in2 pad of 2oz copper.
b) R
θJA
= 96oC/W when mounted
on a minimum pad .
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDD6670A, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
