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FDC653N 参数 Datasheet PDF下载

FDC653N图片预览
型号: FDC653N
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 73 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Electrical Characteristics
15
I
D
, DRAIN-SOURCE CURRENT (A)
3.5
6.0
R
DS(ON)
, NORMALIZED
5.0
12
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
4.5
4.0
3
2.5
V
GS
=3.5V
9
4.0
2
1.5
1
0.5
6
3.5
4.5
5.0
6.0
10
3
3.0
0
0
0.5
1
1.5
2
0
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
6
9
I
D
, DRAIN CURRENT (A)
12
15
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, NORMALIZED
0.18
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 5.0A
1.6
1.4
1.2
1
0.8
0.6
-50
I
D
=2A
0.15
0.12
0.09
V
GS
= 10V
T
A
= 125°C
0.06
T
A
= 25°C
0.03
0
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
15
15
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
V
GS
=0V
1
I
D
, DRAIN CURRENT (A)
12
TA= 125°C
25°C
9
T
A
= -55°C
6
0.1
25°C
125°C
0.01
-55°C
3
0.001
0
1.5
0.0001
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
FDC653N Rev.B