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FDC640P 参数 Datasheet PDF下载

FDC640P图片预览
型号: FDC640P
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道2.5V指定PowerTrenchTM MOSFET [P-Channel 2.5V Specified PowerTrenchTM MOSFET]
分类和应用:
文件页数/大小: 8 页 / 262 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDC640P
August 2000
FDC640P
P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages.
Features
-4.5 A, -20 V. R
DS(ON)
= 0.050
@ V
GS
= -4.5 V
R
DS(ON)
= 0.077
@ V
GS
= -2.5 V
Rugged gate rating (
±
12V).
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
Applications
Load switch
Battery protection
Power management
D
D
S
1
6
2
5
SuperSOT
TM
-6
D
D
G
3
4
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
- Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
Parameter
Ratings
-20
(Note 1a)
Units
V
V
A
W
°
C
±
12
-4.5
-20
1.6
0.8
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
.640
2000
Fairchild Semiconductor International
Device
FDC640P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
FDC640P, Rev.C