FDC640P
Typical Characteristics
15
-3.5V
-I
D
, DRAIN CURRENT (A)
12
-3.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -4.5V
-2.5V
3
V
GS
= -2.0V
2.5
9
2
-2.5V
1.5
-3.0V
-3.5V
1
-4.0V
-4.5V
6
-2.0V
3
0
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.5
0
3
6
9
12
15
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.16
I
D
= -2.25 A
R
DS(ON)
, ON-RESISTANCE (OHM)
1.5
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= -4.5 A
V
GS
= -4.5 V
0.14
0.12
0.1
T
A
= 125
o
C
0.08
0.06
T
A
= 25
o
C
0.04
0.02
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
12
T
A
= -55 C
25
o
C
125
o
C
8
6
4
2
0
0.5
1
1.5
2
2.5
3
-V
GS
, GATE TO SOURCE VOLTAGE (V)
10
-I
D
, DRAIN CURRENT (A)
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5V
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
GS
= 0V
1
T
A
= 125
o
C
25
o
C
0.1
-55
o
C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC640P Rev E(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
