FDC638P
September 2001
FDC638P
P-Channel 2.5V PowerTrench
®
Specified MOSFET
General Description
This P
-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance
These devices are well suited for battery power
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
•
–4.5 A, –20 V. R
DS(ON)
= 48 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 65 mΩ @ V
GS
= –2.5 V
•
Low gate charge (10 nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
•
SuperSOT ™ –6 package: small footprint (72%
smaller than standard SO-8; low profile (1mm thick)
S
D
D
1
6
5
SuperSOT
-6
TM
G
pin 1
2
3
D
D
4
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
–20
±8
(Note 1a)
Units
V
V
A
–4.5
–20
1.6
0.8
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
W
°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
.638
Device
FDC638P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2001
Fairchild Semiconductor Corporation
FDC638P Rev F1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
