FDC634P
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -3.5A
4
CAPACITANCE (pF)
-15V
3
V
DS
= -5V
-10V
800
1000
C
ISS
f = 1 MHz
V
GS
= 0 V
600
2
400
C
OSS
200
C
RSS
0
5
10
15
20
1
0
0
1
2
3
4
5
6
7
8
9
Q
g
, GATE CHARGE (nC)
0
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
10
Figure 8. Capacitance Characteristics.
-I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
LIMIT
100µ s
1ms
10ms
100ms
1s
8
SINGLE PULSE
R
θ
JA
= 156°C/W
T
A
= 25°C
6
1
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 2 5
o
C
0.01
0.1
1
DC
4
0.1
2
10
100
0
0.01
0.1
1
t
1
, TIME (sec)
10
100
-V
D S
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 156 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
o
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC634P Rev E(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
