Typical Characteristics
5
1000
800
600
400
200
0
f = 1 MHz
VGS = 0 V
ID = -3.5A
VDS = -5V
-10V
CISS
4
3
2
1
0
-15V
COSS
CRSS
0
1
2
3
4
5
6
7
8
9
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
10
8
SINGLE PULSE
Rq = 156°C/W
JA
RDS(ON) LIMIT
100ms
1ms
10ms
TA = 25°C
6
100ms
1
1s
4
DC
VGS = -10V
SINGLE PULSE
0.1
0.01
Rq = 156oC/W
2
JA
TA = 25oC
0
0.01
0.1
1
10
100
0.1
1
10
100
t1, TIME (sec)
-V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) + RqJA
RqJA = 156oC/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
TJ - TA = P * R JA(t)
q
Duty Cycle, D = t1/ t2
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC634P Rev E(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
