Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
VGS = 0 V, ID = –250 mA
Breakdown Voltage Temperature
Coefficient
–12
DBVDSS
DTJ
ID = –250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V, VGS = 0 V
–1
mA
nA
nA
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 8 V,
VGS = –8 V
VDS = 0 V
VDS = 0 V
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.4
–10
–0.8
3
–1.5
V
VDS = VGS, ID = –250 mA
Gate Threshold Voltage
Temperature Coefficient
DVGS(th)
DTJ
ID = –250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –3.5 A
VGS = –2.5 V, ID = –3.1 A
VGS = –4.5 V, ID = –3.5A,TJ=125°C
60
82
77
80
110
130
mW
ID(on)
gFS
On–State Drain Current
VGS = –4.5 V, VDS = –5 V
A
S
Forward Transconductance
VDS = –5 V,
ID = –3.5 A
11
Dynamic Characteristics
C
Input Capacitance
779
121
56
pF
pF
pF
iss
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = –10 V,
VGS = –4.5 V, RGEN = 6 W
ID = –1 A,
10
9
20
19
43
20
10
ns
ns
27
11
7.2
1.7
1.5
ns
ns
Qg
VDS = –10 V,
VGS = –4.5 V
ID = –3.5 A,
nC
nC
nC
Qgs
Qgd
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
–1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
–0.8
Notes:
1. RqJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJCis guaranteed by design while RqCAis determined by the user's board design.
a)
78°C/W when
mounted on a 1in pad
of 2 oz copper
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
2
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDC634P Rev E(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
