November 1998
FDC6329L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.5A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) which drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOT
TM
-6
package.
Features
V
DROP
=0.2V @ V
IN
=5V, I
L
=2.8A. R
(ON)
= 0.07
Ω
V
DROP
=0.2V
@ V
IN
=2.5V, I
L
=1.9A. R
(ON)
= 0.105
Ω.
Control MOSFET (Q1) includes Zener protection for ESD
ruggedness
(>6KV Human Body Model).
High performance trench technology for extremely low
on-resistance.
SuperSOT
TM
-6 package design using copper lead frame for
superior thermal and electrical capabilities.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
EQUIVALENT CIRCUIT
V
IN
, R
1
4
Q2
3
V
OUT
, C
1
+
V
DROP
-
9
32
.
V
ON/OFF
IN
OUT
5
Q1
2
V
OUT
, C
1
O N / O FF
R
1
, C
1
pin
1
6
See Application Circuit
1
R
2
SuperSOT
TM
-6
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
FDC6329L
(Note 1)
Units
V
IN
V
ON/OFF
I
L
Input Voltage Range
On/Off Voltage Range
Load Current
- Continuous
- Pulsed
2.5 - 8
1.5 - 8
2.5
10
V
V
A
(Note 2)
P
D
T
J
,T
STG
ESD
Maximum Power Dissipation
(Note 2)
0.7
-55 to 150
6
W
°C
kV
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)
THERMAL CHARACTERISTICS
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 2)
(Note 2)
180
60
°C/W
°C/W
FDC6329L Rev.C