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FDB7030BL 参数 Datasheet PDF下载

FDB7030BL图片预览
型号: FDB7030BL
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道逻辑电平MOSFET PowerTrenchTM [N-Channel Logic Level PowerTrenchTM MOSFET]
分类和应用: 晶体晶体管开关脉冲
文件页数/大小: 5 页 / 113 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDP7030BL/FDB7030BL
Electrical Characteristics
Symbol
W
DSS
I
AR
T
A
= 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
DD
= 15 V,
I
D
= 60 A
Min Typ
Max
73
60
Units
mJ
A
Drain-Source Avalanche Ratings
(Note 1)
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
V
GS
= 0 V,
I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 24 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
30
22
1
±
100
V
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–
Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
I
D
= 30 A
V
GS
= 4.5 V,
I
D
= 25 A
V
GS
= 10 V, I
D
= 30 A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 10 V
V
DS
= 10V,
I
D
= 30 A
1
1.9
–5
6.8
8.5
10.1
3
V
mV/°C
9
12
18
mΩ
A
I
D(on)
g
FS
30
85
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
1760
440
185
pF
pF
pF
V
GS
= 15 mV,
f = 1.0 MHz
1.2
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 15V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
12
12
30
19
22
22
48
33
24
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 30 A,
17
5.4
6.4
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
S
= 30 A
(Note 1)
60
0.92
1.3
30
20
A
V
nS
nC
I
F
= 30 A,
d
iF
/d
t
= 100 A/µs
FDP7030BL/FDB7030BL Rev D1(W)