TM
UniFET
FDA62N28
280V N-Channel MOSFET
Features
Description
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•
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•
•
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62A, 280V, R
Low gate charge ( typical 77 nC)
= 0.051Ω @V = 10 V
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
DS(on)
GS
Low C ( typical 83 pF)
rss
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Fast switching
100% avalanche tested
Improved dv/dt capability
D
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G
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S
TO-3P
FDA Series
G D S
Absolute Maximum Ratings
Symbol
Parameter
FDA62N28
Unit
V
Drain-Source Voltage
Drain Current
280
V
DSS
I
- Continuous (T = 25°C)
62
37
A
A
D
C
- Continuous (T = 100°C)
C
(Note 1)
(Note 2)
I
Drain Current
- Pulsed
248
±30
1919
62
A
V
DM
V
E
Gate-Source voltage
GSS
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
AS
I
(Note 1)
(Note 1)
(Note 3)
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
50
mJ
V/ns
AR
dv/dt
4.5
P
Power Dissipation
(T = 25°C)
500
4
W
W/°C
D
C
- Derate above 25°C
T
T
T
Operating and Storage Temperature Range
-55 to +150
°C
J, STG
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
L
300
°C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
0.25
--
Unit
°C/W
°C/W
°C/W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
--
0.24
--
θJC
θCS
θJA
Thermal Resistance, Junction-to-Ambient
40
©2005 Fairchild Semiconductor Corporation
FDA62N28 Rev. A
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
