FDA59N30 300V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 29.5 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µ A
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
70
10
3
10
2
10
µ
s
100
µ
s
60
50
40
30
20
10
0
25
I
D
, Drain Current [A]
10
1
DC
Operation in This Area
is Limited by R
DS(on)
10
0
※
Notes :
10
-1
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
10
-2
10
0
10
1
10
2
I
D
, Drain Current [A]
1 ms
10 ms
100 ms
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 11. Transient Thermal Response Curve
Z
θ
JC
Thermal Response
(t),
10
-1
D =0.5
0.2
0.1
0.05
10
-2
0.02
0.01
※
N otes :
1. Z
θ
JC
= 0.25
℃
/W M ax.
(t)
2. D uty Factor, D =t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
P
DM
single pulse
t
1
10
-3
t
2
10
0
10
-5
10
-4
10
-2
10
-1
10
1
t
1
, S quare W ave Pulse D uration [sec]
FDA59N30 Rev. A
4
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