FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
FDH50N50_F133 / FDA50N50
500V N-Channel MOSFET
Features
• 48A, 500V, R
DS(on)
= 0.105Ω @V
GS
= 10 V
• Low gate charge ( typical 105 nC)
• Low C
rss
( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET
February 2012
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
G
G D
S
FDH Series
TO-247
TO-3PN
G DS
FDA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FDH50N50_F133/FDA50N50
500
48
30.8
192
±20
1868
48
62.5
20
625
5
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.2
--
40
Unit
°C/W
°C/W
°C/W
©2012 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDH50N50_F133 / FDA50N50 Rev.C0
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
