FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET
July 2007
FDA20N50
/ FDA20N50_F109
500V N-Channel MOSFET
Features
• 22A, 500V, R
DS(on)
= 0.23Ω @V
GS
= 10 V
• Low gate charge ( typical 45.6 nC)
• Low C
rss
( typical 27 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
TO-3P
G DS
FDA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FDA20N50
500
22
13.2
88
±
30
1110
22
28.0
4.5
280
2.3
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.44
--
40
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDA20N50 / FDA20N50_F109 Rev. B1