ES1A - ES1D
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
1.5
1.25
1
0.75
0.5
0.25
0
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
COPPER PAD AREAS
10
Forward Current, I
F
[A]
1
0.1
0.01
T
A
= 25
º
C
Pulse Width = 300µs
µ
2% Duty Cycle
0
25
50
75
100
125
Ambient Temperature [ºC]
150
175
0.001
0.4
0.6
0.8
1
1.2
Forward Voltage, V
F
[V]
1.4
Figure 1. Forward Current Derating Curve
30
25
Figure 2. Forward Voltage Characteristics
1000
Peak Forward Surge Current, I
FSM
[A]
Reverse Current, I
R
[mA]
100
20
15
10
5
0
T
A
= 125
º
C
10
T
A
= 75
º
C
1
T
A
= 25
º
C
1
2
5
10
20
Number of Cycles at 60Hz
50
100
0.1
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Non-Repetitive Surge Current
14
Total Capacitance, C
T
[pF]
12
10
8
6
4
2
0
0.1
Figure 4. Reverse Current vs Reverse Voltage
1
10
Reverse Voltage, V
R
[V]
100
Figure 5. Total Capacitance
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
+0.5A
(-)
trr
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
(+)
OSCILLOSCOPE
(Note 1)
0
-0.25A
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001
Fairchild Semiconductor Corporation
ES1A-ES1D, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
