DF005S - DF10S
DF005S - DF10S
Features
•
•
•
•
Surge overload rating: 50 amperes
peak.
Glass passivated junction.
Low leakage.
UL certified, UL #E111753.
+
-
~
~
SDIP
Bridge Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
005S
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Average Rectified Forward Current,
@ T
A
= 40°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
35
50
01S
100
70
100
02S
200
140
200
Value
04S
400
280
400
1.5
50
-55 to +150
-55 to +150
06S
600
420
600
08S
800
560
800
10S
1000
700
1000
Units
V
V
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient,*
per leg
Value
3.1
40
Units
W
°C/W
*
Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Electrical Characteristics
Symbol
V
F
I
R
T
A
= 25°C unless otherwise noted
Parameter
Forward Voltage, per bridge @ 1.0 A
Reverse Current, total bridge @ rated V
R
T
A
= 25°C
T
A
= 125°C
I
2
t rating for fusing
t < 8.35 ms
Total Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
Device
1.1
5.0
500
10
25
Units
V
µA
µA
A
2
s
pF
C
T
2001
Fairchild Semiconductor Corporation
DF005S-DF10S, Rev. C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
