DF005M - DF10M
Discrete POWER & Signal
Technologies
DF005M - DF10M
0.335 (8.509)
0.320 (8.128)
Features
•
•
•
Surge overload rating: 50 amperes
peak.
Glass passivated junction.
Low leakage.
0.022 (0.559)
0.018 (0.457)
0.075 (1.905)
0.055 (1.397)
0.255 (6.477)
0.245 (6.223)
+
0.350 (8.890)
0.300 (7.620)
0.315 (8.001)
0.285 (7.239)
LOW PROFILE ALSO AVAILABLE
0.205 (5.207)
0.195 (4.953)
BODY - - 0.102 (2.591)*
0.095 (2.413)*
LEAD - - 0.080 (2.032)**
0.050 (1.270)**
0.130 (3.302)*
0.120 (3.408)*
0.185 (4.699)**
0.150 (3.810)**
DIP
0.045 (1.143)
0.035 (0.889)
1.5 Ampere Bridge Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
P
D
R
θJA
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Average Rectified Current
@ T
A
= 40°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Storage Temperature Range
Operating Junction Temperature
Value
1.5
Units
A
50
3.1
25
40
-55 to +150
-55 to +150
A
W
mW/°C
°C/W
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Electrical Characteristics
Parameter
T
A
= 25°C unless otherwise noted
Device
005M
01M
100
70
100
02M
200
140
200
04M
400
280
400
5.0
500
1.1
10
25
06M
600
420
600
08M
800
560
800
10M
1000
700
1000
50
35
50
Units
V
V
V
µA
µA
V
2
A Sec
pF
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Maximum Reverse Leakage,
total bridge @ rated V
R
T
A
= 25°C
T
A
= 125°C
Maximum Forward Voltage Drop,
per bridge
@ 1.0 A
2
I t rating for fusing
t < 8.35 ms
Typical Junction Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
ã
1998 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
