CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
Symbol
T
STG
T
OPR
T
SOL
P
D
Device
All
All
All
-M
non -M
-M
non -M
Value
-55 to +150
-55 to +100
260 for 10 sec
250
260
2.94
3.50
Units
°C
°C
°C
mW
mW/°C
EMITTER
Continuous Forward Current
I
F
V
R
I
F
(pk)
P
D
-M
non -M
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
All
-M
non -M
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
-M
non -M
-M
non -M
DETECTOR
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
P
D
-M
non -M
-M
non -M
150
200
1.76
2.67
mW/°C
mW
60
90
6
1.5
3.0
120
135
1.41
1.8
mW/°C
mW
V
A
mA
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Parameters
EMITTER
Input Forward Voltage
I
F
= 60 mA
I
F
= 10 mA
Capacitance
V
F
= 0 V, f = 1.0 MHz
C
J
I
R
V
F
-M
non -M
non -M
-M
Reverse Leakage Current V
R
= 6 V
DETECTOR
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Collector to Base
Capacitance
Collector to Emitter
Collector to Base
Emitter to Base
I
C
= 1.0 mA, I
F
= 0
I
C
= 10 µA, I
F
= 0
I
E
= 100 µA, I
F
= 0
V
CE
= 10 V, I
F
= 0
V
CB
= 10 V, I
F
= 0
V
CE
= 0, f = 1 MHz
V
CB
= 0, f = 1 MHz
V
EB
= 0, f = 1 MHz
BV
CEO
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
C
CB
C
EB
All
All
All
All
All
All
All
All
70
70
7
100
120
10
1
50
20
V
V
V
nA
nA
pF
pF
pF
All
1.35
1.15
50
18
0.001
10
µA
1.65
1.50
pF
V
Test Conditions
Symbol
Device
Min
Typ
Max
Units
8
20
10
2
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
www.fairchildsemi.com
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