BUZ11
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
30
0.8
Unless Otherwise Specified
40
V
GS
> 10V
0.6
0.4
20
10
0.2
0
0
25
50
75
100
T
A
, CASE TEMPERATURE (
o
C)
125
150
0
0
50
100
T
C
, CASE TEMPERATURE (
o
C)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Z
θJC,
TRANSIENT THERMAL IMPEDANCE
1
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
t
1
t
2
0.01
10
-5
10
-4
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
3
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
10
2
2.5µs
10µs
100µs
10
1
1ms
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
10
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
DC
10
2
60
P
D
= 75W
50
I
D
, DRAIN CURRENT (A)
10V
40
30
20
10
0
V
GS
= 8.0V
V
GS
= 7.5V
V
GS
= 7.0V
V
GS
= 6.5V
V
GS
= 6.0V
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
6
V
GS
= 20V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
10
0
10
0
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
BUZ1 Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
