BUT11/11A
BUT11/11A
High Voltage Power Switching Applications
1
TO-220
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BUT11
: BUT11A
V
CEO
Collector-Emitter Voltage
: BUT11
: BUT11A
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
1.Base
Value
850
1000
Units
V
V
400
450
9
5
10
2
4
100
150
- 65 ~ 150
V
A
A
A
A
W
°C
°C
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BUT11
: BUT11A
Collector Cut-off Current
: BUT11
: BUT11A
I
EBO
V
CE
(sat)
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
: BUT11
: BUT11A
Base-Emitter Saturation Voltage
: BUT11
: BUT11A
Turn On Time
Storage Time
Fall Time
V
CE
= 850V, V
BE
= 0
V
BE
= 9V, I
C
= 0
I
C
= 3A, I
B
= 0.6A
I
C
= 2.5A, I
B
= 0.5A
I
C
= 3A, I
B
= 0.6A
I
C
= 2.5A, I
B
= 0.5A
V
CC
= 250V, I
C
= 2.5A
I
B1
= -I
B2
= 0.5A
R
L
= 100Ω
1
1
10
1.5
1.5
1.3
1.3
1
4
0.8
mA
mA
mA
V
V
V
V
µs
µs
µs
Test Condition
I
C
= 100mA, I
B
= 0
Min.
400
450
Typ.
Max.
Units
V
V
I
CES
V
BE
(sat)
t
ON
t
STG
t
F
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
Thermal Characteristics
T
C
=25°C unless otherwise noted
Symbol
R
θjC
Parameter
Thermal Resistance, Junction to Case
Typ
Max
1.25
Units
°C/W
Rev. B1, August 2001
©2001 Fairchild Semiconductor Corporation