BU508AF
BU508AF
TV Horizontal Output Applications
1
TO-3PF
2.Collector
3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
1500
700
5
5
15
60
150
- 65 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
BV
EBO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
Parameter
* Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Test Condition
I
C
= 100mA, I
B
= 0
I
E
= 10mA, I
C
= 0
V
CE
= 1500V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 4.5A
I
C
= 4.5A, I
B
= 2A
I
C
= 4.5A, I
B
= 2A
2.25
1
1.5
V
V
Min.
700
5
1
10
Typ.
Max.
Units
V
V
mA
mA
* Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
