BSS123
June 2003
BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
Features
•
0.17 A, 100 V. R
DS(ON)
= 6Ω @ V
GS
= 10 V
R
DS(ON)
= 10Ω @ V
GS
= 4.5 V
•
High density cell design for extremely low R
DS(ON)
•
Rugged and Reliable
•
Compact industry standard SOT-23 surface mount
package
D
D
S
G
S
SOT-23
G
T
A
=25 C unless otherwise noted
o
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
Derate Above 25°C
Parameter
Ratings
100
±20
(Note 1)
Units
V
V
A
W
mW/°C
°C
0.17
0.68
0.36
2.8
−55
to +150
300
(Note 1)
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
350
°C/W
Package Marking and Ordering Information
Device Marking
SA
Device
BSS123
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2003
Fairchild Semiconductor Corporation
BSS123 Rev G(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
