BSP52
BSP52
NPN Darlington Transistor
• This device is designed for applications requiring extremly high current
gain at collector currents to 500mA.
• Sourced from process 03.
2
1
4
3
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings*
T
A
=25°C unless otherwise noted
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
80
90
5
800
- 55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CBO
V
(BR)EBO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
Parameter
Test Conditions
I
C
= 100µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 80V, V
BE
= 0
V
EB
= 4.0V, I
C
= 0
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 500mA, I
B
= 0.5mA
I
C
= 500mA, I
B
= 0.5mA
1000
2000
1.3
1.9
V
V
Min.
90
5
10
10
Typ.
Max.
Units
V
V
µA
µA
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Characteristics
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max.
1000
8.0
125
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, June 2002