BD675A/677A/679A/681
BD675A/677A/679A/681
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD676A, BD678A, BD680A and BD682 respectively
TO-126
2.Collector
3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD675A
: BD677A
: BD679A
: BD681
: BD675A
: BD677A
: BD679A
: BD681
1
1. Emitter
Value
45
60
80
100
45
60
80
100
5
4
6
100
40
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
*Collector-Emitter Sustaining Voltage
: BD675A
: BD677A
: BD679A
: BD681
Collector-Base Voltage
: BD675A
: BD677A
: BD679A
: BD681
: BD675A
: BD677A
: BD679A
: BD681
: BD675A/677A/679A
: BD681
Test Condition
I
C
= 50mA, I
B
= 0
Min.
45
60
80
100
200
200
200
200
500
500
500
500
2
750
750
2.8
2.5
2.5
2.5
V
V
V
V
Typ.
Max.
Units
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
mA
I
CBO
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, V
BE
= 0
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 1.5A
I
C
= 2A, I
B
= 40mA
I
C
= 1.5A, I
B
= 30mA
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 1.5A
I
CEO
Collector Cut-off Current
I
EBO
h
FE
V
CE
(sat)
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
: BD675A/677A/679A
: BD681
* Base-Emitter ON Voltage : BD675A/677A/679A
: BD681
V
BE
(on)
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
