BD434/436/438
Typical Characteristics
1000
-1
100
V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= -1V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
-0.1
10
1
-0.01
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-5.0
-4.5
-1000
V
CE
= -1V
I
C
[A], COLLECTOR CURRENT
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
-0.0
C
CBO
(pF), COLLECTOR BASE CAPACITANCE
-100
-10
-0.3
-0.5
-0.8
-1.0
-1.3
-1.5
-1.8
-2.0
-1
-0.1
-1
-10
-100
-1000
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector-Base Capacitance
-10
I
C
MAX. (Pulsed)
10 1m
ms s
10
µ
s
48
42
100
µ
s
I
C
[A], COLLECTOR CURRENT
I
C
Max. (Continuous)
DC
P
C
[W], POWER DISSIPATION
-100
36
30
-1
24
18
12
-0.1
-1
BD434
BD436
BD438
-10
6
0
0
25
50
o
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
