BD433/435/437
BD433/435/437
Medium Power Linear and Switching
Applications
• Complement to BD434, BD436 and BD438 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BD433
: BD435
: BD437
V
CES
Collector-Emitter Voltage
: BD433
: BD435
: BD437
Collector-Emitter Voltage
: BD433
: BD435
: BD437
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
22
32
45
22
32
45
22
32
45
5
4
7
1
36
150
- 65 ~ 150
V
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Parameter
Value
Units
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
