BD234/236/238
BD234/236/238
Medium Power Linear and Switching
Applications
• Complement to BD 233/235/237 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BD234
: BD236
: BD238
V
CEO
Collector-Emitter Voltage
: BD234
: BD236
: BD238
Collector-Emitter Voltage
: BD234
: BD236
: BD238
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
- 45
- 60
- 100
- 45
- 60
- 80
- 45
- 60
- 100
-5
-2
-6
25
150
- 65 ~ 150
V
V
V
V
V
V
V
V
V
V
A
A
W
°C
°C
Parameter
Value
Units
V
CER
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD234
: BD236
: BD238
Collector Cut-off Current
: BD234
: BD236
: BD238
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 150mA
V
CE
= - 2V, I
C
= - 1A
I
C
= - 1A , I
B
= - 0.1A
V
CE
= - 2V, I
C
= - 1A
V
CE
= - 10V, I
C
= -250mA
3
40
25
- 0.6
- 1.3
V
V
MHz
- 100
- 100
- 100
-1
µA
µA
µA
mA
Test Condition
I
C
= - 100mA, I
B
= 0
Min.
- 45
- 60
- 80
Typ.
Max.
Units
V
V
V
I
CBO
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000