BD136/138/140
BD136/138/140
Medium Power Linear and Switching
Applications
• Complement to BD135, BD137 and BD139 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD136
: BD138
: BD140
: BD136
: BD138
: BD140
Value
- 45
- 60
- 80
- 45
- 60
- 80
-5
- 1.5
- 3.0
- 0.5
12.5
1.25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD136
: BD138
: BD140
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= - 30mA, I
B
= 0
Min.
- 45
- 60
- 80
- 0.1
- 10
25
25
40
Typ.
Max.
Units
V
V
V
µA
µA
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
V
CB
= - 30V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 5mA
V
CE
= - 2V, I
C
= - 0.5A
V
CE
= - 2V, I
C
= - 150mA
I
C
= - 500mA, I
B
= - 50mA
V
CE
= - 2V, I
C
= - 0.5A
250
- 0.5
-1
V
V
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
h
FE
Classificntion
Classification
h
FE3
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
©2000 Fairchild Semiconductor International
Rev. A, February 2000
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
