BCV27
NPN Darlington Transistor
(continued)
Typical Characteristics
(continued)
V
BEON
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
2
1.6
1.2
0.8
0.4
0
β
= 1000
- 40 ºC
25 °C
125 ºC
Base Emitter ON Voltage vs
Collector Current
2
1.6
1.2
125 ºC
- 40 ºC
25 °C
0.8
0.4
0
V
CE
= 5V
1
10
100
I
C
- COLLECTOR CURRENT (mA)
P 05
1000
1
10
100
I
C
- COLLECTOR CURRENT (mA)
P0
1000
100
V
CB
= 30V
BV
CER
- BREAKDOWN VOLTAGE (V)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
62.5
62
61.5
61
60.5
60
59.5
0.1
10
1
0.1
0.01
25
50
75
100
T
A
- AMBIENT TEMPERATURE ( º C)
P0
125
1
RESISTANCE (k
Ω
)
10
100
1000
Input and Output Capacitance
vs Reverse Voltage
f = 1.0 MHz
20
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product
vs Collector Current
50
Vce = 5V
40
CAPACITANCE (pF)
10
30
Cib
5
20
Cob
10
2
0.1
1
10
100
0
1
10
P 05
20
50
100 150
Vce - COLLECTOR VOLTAGE(V)
P0
I
C
- COLLECTOR CURRENT (mA)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
