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BCP69 参数 Datasheet PDF下载

BCP69图片预览
型号: BCP69
PDF下载: 下载PDF文件 查看货源
内容描述: PNP中功率晶体管 [PNP MEDIUM POWER TRANSISTOR]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 5 页 / 125 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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BCP69 PNP General Purpose Amplifier
January 2007
BCP69
PNP General Purpose Amplifier
4
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 1.0A.
• Sourced from Process 77.
1
3
2
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings*
T =25°C unless otherwise noted
a
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
- Continuous
Value
-20
-30
-5.0
-1.5
150
- 55 ~ +150
Units
V
V
V
A
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics*
T =25°C unless otherwise noted
a
Symbol
P
D
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Value
1.0
8.0
125
Units
W
mW/°C
°C/W
* Device mounted on FR-4 PCB 36mm
×
18mm
×
1.5mm; mounting pad for the collector lead min. 6cm
2
Electrical Characteristics*
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
T
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Test Conditions
I
C
= -10mA, I
B
= 0
I
C
= -1.0mA, I
E
= 0
I
E
= -100µA, I
C
= 0
V
CB
= -25V, I
E
= 0
V
CB
= -25V, I
E
= 0, T
j
= 150
o
C
V
EB
= -5.0V, I
C
= 0
I
C
= -5mA, V
CE
= -1.0V
I
C
= -500mA, V
CE
= -1.0V
I
C
= -1.0A, V
CE
= -1.0V
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, V
CE
= -1.0V
V
CB
= -10V, I
E
= 0, f = 1.0MHz
I
C
= -50mA, V
CE
= -10V, f = 20MHz
Min.
-20
-30
-5.0
Typ.
Max.
Units
V
V
V
-100
-10
-100
50
85
60
375
-0.5
-1.0
30
2.5
nA
uA
nA
V
CE(sat)
V
BE(on)
C
cb
h
fe
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Capacitance
Small-Signal Current Gain
V
V
pF
* Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BCP69 Rev. B