BCP56
BCP56
C
E
B
C
SOT-223
NPN General Purpose Amplifier
These devices are designed for
general purpose medium power amplifiers and switches requiring collector
currents to 1A. Sourced from Process 39.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A = 25°C unless otherwise noted
BCP56
80
100
5
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
T
A = 25°C unless otherwise noted
Max
Characteristic
BCP56
P
D
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
1
8
125
W
mW/°C
°C/W
Units
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
©1998
Fairchild Semiconductor Corporation
Pr3947_REV A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
