BCP52
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 125°C
V
EB
= 5.0 V, I
C
= 0
60
60
5.0
100
10
10
V
V
V
nA
µA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 5.0 mA, V
CE
= 2.0 V
I
C
= 150 mA, V
CE
= 2.0 V
I
C
= 500 mA, V
CE
= 2.0 V
I
C
= 500 mA, I
B
= 50 mA
I
C
= 500 mA, V
CE
= 2.0 V
25
40
25
250
0.5
1.0
V
V
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Typical Characteristics
vs Collector Current
400
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
h
FE
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
0.5
0.4
0.3
0.2
0.1
0
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
P 8
V
CE
= 5V
300
125 °C
β
= 10
- 40 ºC
25 °C
200
- 40 ºC
25 °C
100
125 ºC
0
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
1
1
1.5
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
