BC857A / BC857B / BC857C
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 1.0
µA,
I
C
= 0
V
CB
= 30 V
V
CB
= 30 V, T
A
= 150°C
45
50
5.0
15
4.0
V
V
V
nA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 2.0 mA, V
CE
= 5.0 V
BC857A
BC857B
BC857C
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5.0 mA
I
C
= 2.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
125
220
420
250
475
800
0.3
0.65
0.75
0.82
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.6
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
NF
Current Gain - Bandwidth Product
Output Capacitance
Noise Figure
I
C
= 10 mA, V
CE
= 5.0,
f = 100 mHz
V
CB
= 10 V, f = 1.0 MHz
I
C
= 0.2 mA, V
CE
= 5.0,
R
S
= 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
100
4.5
10
MHz
pF
dB
Typical Characteristics
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
0.15
25 °C
400
300
125 °C
β
= 10
25 °C
200
100
0
0.01
- 40 °C
0.1
0.05
0
0.1
125 ºC
- 40 ºC
0.1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1
10
100
I
C
- COLLECTOR CURRENT (mA)
P 68
300
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
