BC847BS
June 2007
BC847BS
NPN Multi-chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 200 mA.
Sourced from Process 07.
E2
B2
Dual NPN Signal Transister
C1
NOTE:
The pinouts are symmetrical; pin 1 and pin
SC70-6
Mark: .1F
B1
Pin #1
E1
C2
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
Absolute Maximum Ratings
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
T
J,
T
STG
NOTES:
* T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature and Storage Temperature
Value
50
50
45
6.0
100
-55 ~ +150
Units
V
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θ
JA
Total Device Dissipation
Derate above 25℃
* T
a
= 25°C unless otherwise noted
Characteristic
Max
210
1.6
625
Units
mW
mW/℃
℃/W
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BC847BS Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
