BC817/BC818
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
SWITCHING AND AMPLIFIER APPLICATIONS
•
Suitable for AF-Driver stages and low power output stages
•
Complement to BC807/BC808
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector Emitter Voltage : BC817
: BC818
Collector Emitter Voltage : BC817
: BC818
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CES
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Rating
50
30
45
25
5
800
310
150
-65 ~ 150
Unit
V
V
V
V
V
mA
mW
°C
°C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Emitter Breakdown Voltage
: BC817
: BC818
Collector-Emitter Breakdown Voltage
: BC817
: BC818
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Capacitance
Symbol
BV
CEO
Test Conditions
I
C
=10mA, I
B
=0
45
25
BV
CES
I
C
=0.1mA, I
B
=0
50
30
5
100
100
630
0.7
1.2
100
12
V
V
V
nA
nA
V
V
Min
Typ
Max
Unit
BV
EBO
I
CES
I
EBO
h
FE
1
h
FE
2
V
CE
(sat)
V
BE
(on)
f
T
C
CBO
I
E
=0.1mA, I
C
=0
V
CE
=25V, I
B
=0
V
EB
=4V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=300mA
V
CE
=5V, I
C
=10mA
f=50MHz
V
CB
=10V, f=1MHz
100
60
V
V
MHz
pF
h
FE
CLASSIFICATION
Classification
h
FE
1
h
FE
2
16
100-250
60-
25
160-400
100-
40
250-630
170-
MARKING CODE
TYPE
MARKING
817-16
8FA
817-25
8FB
817-40
8FC
818-16
8GA
818-25
8GB
818-40
8GC
Rev. B
©
1999 Fairchild Semiconductor Corporation