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BC81725D87Z 参数 Datasheet PDF下载

BC81725D87Z图片预览
型号: BC81725D87Z
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 9 页 / 274 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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BC817-25 / BC817-40
BC817-25
BC817-40
C
E
SOT-23
Mark: 6B. / 6C.
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 38.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CES
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
45
50
5.0
1.5
-55 to +150
Units
V
V
V
A
°C
3
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
*BC817-25 / BC817-40
350
2.8
357
Units
mW
mW/°C
°C/W
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997
Fairchild Semiconductor Corporation