BC807/BC808
Typical Characteristics
-500
-20
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
-400
-300
mA
- 5. 0 A
I
B
= - 4.5m
I
B
= 4.0mA
-
A
I
B
= - 3.5m A
I
B
= - 3.0m A
=
m
I
B
- 2. 5
A
I
B
=
2.0m
-
I
B
=
I
B
=
-16
- 80
µ
A
I
B
=
- 70
µ
A
- 60
I
B
=
µ
A
- 50
P
T
I
B
=
-12
µ
A
- 40
=6
00
mW
I
B
=
-200
mA
- 1. 5
P
T
= 60
0mW
I
B
=
-8
µ
A
30
µ
A
I
B
= -
I
B
= - 1.0mA
I
B
= - 0.5mA
I
B
= - 20
-4
µ
A
-100
I
B
= - 10
µ
A
I
B
= 0
-0
-0
-1
-2
-3
-4
-5
-0
-0
-10
-20
-30
I
B
= 0
-40
-50
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-10
PULSE
I
C
= 10 I
B
PULSE
V
CE
(sat)
V
CE
= - 2.0V
h
FE
, DC CURRENT GAIN
100
-1
- 1.0V
10
-0.1
V
BE
(sat)
1
-0.1
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1000
100
I
C
[mA], COLLECTOR CURRENT
V
CE
= -1V
PULSE
f = 1.0MHz
C
ib
, C
ob
[pF], CAPACITANCE
-100
C
ib
C
ob
10
-10
-1
-0.1
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
1
-0.1
-1
-10
-100
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
BE
[V], BASE-EMITTER VOLTAGE
V
EB
[V], EMITTER-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Input Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
