BC807-16 / BC807-25 / BC807-40
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 20 V
V
CB
= 20 V, T
A
= 150°C
45
50
5.0
100
5.0
V
V
V
nA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100 mA, V
CE
= 1.0 V
- 16
- 25
- 40
I
C
= 500 mA, V
CE
= 1.0 V
I
C
= 500 mA, I
B
= 50 mA
I
C
= 500 mA, V
CE
= 1.0 V
100
160
250
40
250
400
600
0.7
1.2
V
V
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
400
Collector-Emitter Saturation
Voltage vs Collector Current
0.6
0.5
0.4
0.3
0.2
125 °C
V
CE
= 5V
300
125 °C
β
= 10
- 40 °C
25 °C
200
25 °C
100
- 40 °C
0.1
0
0.01
0
0.01
I
C
0.1
- COLLECTOR CURRENT (A)
1
0.1
I
C
- COLLE CTOR CURRENT (A)
1
1.5
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
