BAV99WT1G Small Signal Diode
April 2005
BAV99WT1G
Small Signal Diode
Connection Diagram
3
3
FA
1
2
1
SOT-323
2
Absolute Maximum Ratings *
Symbol
V
RRM
I
F(AV)
I
FSM
T
a
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
70
200
1.0
2.0
-65 to +150
150
Unit
V
mA
A
A
°C
°C
T
STG
T
J
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
270
460
Unit
mW
°C/W
FR-4 board (3.0
×
4.5
×
0.062” by 1.0
×
0.5” land pads)
Electrical Characteristics
Symbol
V
R
V
F
T
C
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
I
R
= 100µA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Conditions
Min.
70
Max
715
855
1.0
1.25
2.5
50
70
2.0
6.0
Units
V
mV
mV
V
V
µA
µA
µA
pF
ns
I
R
Reverse Leakage
V
R
= 70V
V
R
= 25V, T
A
= 150°C
V
R
= 70V, T
A
= 150°C
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω
C
T
t
rr
Total Capacitance
Reverse Recovery Time
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BAV99WT1G Rev. A
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
