BAV99 — Small Signal Diode
August 2011
BAV99
Small Signal Diode
Connection Diagram
3
3
3
2
1
A7
2
1
2
1
SOT-23
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 300 microseconds
Storage Temperature Range
Operating Junction Temperature
Value
70
200
1.0
8.0
-55 to +150
-55 to +150
Units
V
mA
A
A
°C
°C
T
stg
T
j
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
350
357
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
Test Condition
Min.
70
Max.
715
855
1.0
1.25
2.5
30
50
1.5
6.0
Units
V
mV
mV
V
V
μA
μA
μA
pF
ns
I
R
C
T
t
rr
I
R
= 100μA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Reverse Leakage
V
R
= 70V
V
R
= 25V, T
A
= 150°C
V
R
= 70V, T
A
= 150°C
Total Capacitance
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω
© 2011 Fairchild Semiconductor Corporation
BAV99 Rev. C1
1
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
