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BAV23S 参数 Datasheet PDF下载

BAV23S图片预览
型号: BAV23S
PDF下载: 下载PDF文件 查看货源
内容描述: 高压通用二极管 [HIGH VOLTAGE GENERAL PURPOSE DIODE]
分类和应用: 二极管光电二极管高压
文件页数/大小: 5 页 / 42 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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DISCRETE POWER AND SIGNAL
TECHNOLOGIES
BAV23S
HIGH VOLTAGE GENERAL PURPOSE DIODE
P
D
. . . .350
mW @ T
A
= 25 Deg C
B
V
. . . .250
V (M
IN
) @ I
R
= 100 uA
T
RR
. . .
50 nS @ I
F
=I
R
= 30 mA I
RR
= 3.0 mA
ABSOLUTE MAXIMUM RATINGS
(NOTE 1)
TEMPERATURES
Storage Temperature
Operating Junction Temperature
POWER DISSIPATION
(NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C
Derating Factor per Degree C
VOLTAGES & CURRENTS
V
RRM
Repetitive Peak Reverse Voltage
(Single Device)
V
RRM
Repetitive Peak Reverse Voltage
(Series Connection)
V
RWM
Continuous Peak Reverse Voltage
(Single Device)
V
RWM
Continuous Peak Reverse Voltage
(Series Connection)
IO
Average Rectified Current
IF
DC Forward Current
if
Recurrent Peak Forward Current
if (surge) Peak Forward Surge Current
Pulse Width = 1.0 microsec
Pulse Width = 100 microsec
Pulse Width = 10 millisec
150 Degrees C
150 Degrees C
350 mW
2.8 mW
250 V
500 V
200 V
400 V
200 mA
400 mA
700 mA
9.0 A
3.0 A
1.7 A
1
3
L30
1
2
PACKAGE
TO-236AB (Low)
(SOT-23)
CONNECTION DIAGRAMS
3
2
ELECTRICAL CHARACTERISTICS
(25 Degrees C Ambient Temperature unless otherwise stated)
SYM
B
V
I
R
CHARACTERISTICS
Breakdown Voltage
Reverse Current (single device)
Reverse Current (series connection)
MIN
250
MAX
UNITS
V
TEST CONDITIONS
I
R
=
V
R
=
V
R
=
V
R
=
V
R
=
I
F
=
I
F
=
I
F
=
I
F
=
100 uA
200 V
200 V
400 V
400 V
100 mA
200 mA
100 mA
200 mA
100
100
100
100
1.00
1.25
2.00
2.50
50
nA
uA
nA
uA
V
V
V
V
nS
T
A
= +150 Deg C
T
A
= +150 Deg C
V
F
Forward Voltage (single device)
Forward Voltage (series connection)
T
RR
Reverse Recovery Time
I
F
= I
R
= 30 mA
I
RR
= 3.0 mA
R
L
= 100 ohms
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junction temperature of 150 degrees C and junction-to-ambient thermal resistance of 357 degrees C
per Watt. (Derating factor of 2.8 milliwatts per degree C)