BAS20 — General Purpose High Voltage Diode
April 2008
BAS20
General Purpose High Voltage Diode
Connection Diagram
3
3
2
1
1
A81.
2
MARKING
3
1
2.NC
SOT-23
Absolute Maximum Ratings *
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
200
200
1.0
2.0
-55 to +150
-55 to +150
Units
V
mA
A
A
°C
°C
T
STG
T
J
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
qJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
350
357
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
I
R
C
T
t
rr
Breakdown Voltage
Forward Voltage
Reverse Leakage
Total Capacitance
T
A
=25°C unless otherwise noted
Parameter
Test Conditions
I
R
= 100mA
I
F
= 100mA
I
F
= 200mA
V
R
=50V
V
R
=50V, T
A
= 150°C
V
R
= 0V, f = 1.0MHz
I
F
= I
R
=30mA,
I
RR
= 3.0mA, R
L
= 100W
Min.
200
Max.
1.0
1.25
100
100
5
50
Units
V
V
V
nA
mA
pF
ns
Reverse Recovery Time
© 2007 Fairchild Semiconductor Corporation
BAS20 Rev. 1.0.0
1
www.fairchildsemi.com
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