KSB772
KSB772
Audio Frequency Power Amplifier
• Low Speed Switching
• Complement to KSD882
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
R
θja
R
θjc
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction to Ambient
Junction to Case
Junction Temperature
Storage Temperature
Parameter
Value
- 40
- 30
-5
-3
-7
- 0.6
10
1
132
13.5
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C/W
°C/W
°C
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= - 30V, I
E
= 0
V
EB
= - 3V, I
C
= 0
V
CE
= - 2V, I
C
= - 20mA
V
CE
= - 2V, I
C
= - 1A
I
C
= - 2A, I
B
= - 0.2A
I
C
= - 2A, I
B
= - 0.2A
V
CE
= - 5V, I
E
= - 0.1A
V
CB
= - 10V, I
E
= 0
f = 1MHz
30
60
220
160
- 0.3
- 1.0
80
55
Min.
Typ.
Max.
-1
-1
400
- 0.5
- 2.0
V
V
MHz
pF
Units
µA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE
Classificntion
Classification
h
FE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
G
200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. B, October 2002
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
