Typical Characteristics
VGS
Top :
15.0V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
101
101
Bottom: 5.0V
150oC
25oC
100
100
-55oC
※
Notes :
※
Notes :
1. V = 40V
μ
1. 250 s Pulse Test
DS μ
-1
10
2. 250 s Pulse Test
℃
2. TC = 25
-1
10
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
1
0
101
VGS = 10V
VGS = 20V
100
℃
150
℃
25
※
Notes :
1. V = 0V
GS μ
2. 250 s Pulse Test
※
℃
Note : T = 25
J
-1
10
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3000
2500
2000
1500
1000
500
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = C
gd
VDS = 120V
VDS = 300V
VDS = 480V
C
iss
6
C
4
oss
※
Notes :
1. VGS = 0 V
2. f = 1 MHz
C
2
rss
※
Note: ID = 7.0 A
35
0
0
10
-1
1
10
100
0
5
10
15
20
25
30
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
