74ABT245
Absolute Maximum Ratings
(Note 1)
Storage Temperature
Ambient Temperature under Bias
Junction Temperature under Bias
V
CC
Pin Potential to Ground Pin
Input Voltage (Note 2)
Input Current (Note 2)
Voltage Applied to Any Output
in the Disabled or
Power-off State
in the HIGH State
Current Applied to Output
in LOW State (Max)
DC Latchup Source Current
Over Voltage Latchup (I/O)
twice the rated I
OL
(mA)
−500
mA
10V
−0.5V
to 5.5V
−0.5V
to V
CC
−65°C
to
+150°C
−55°C
to
+125°C
−55°C
to
+150°C
−0.5V
to
+7.0V
−0.5V
to
+7.0V
−30
mA to
+5.0
mA
Recommended Operating
Conditions
Free Air Ambient Temperature
Supply Voltage
Minimum Input Edge Rate (∆V/∆t)
Data Input
Enable Input
50 mV/ns
20 mV/ns
−40°C
to
+85°C
+4.5V
to
+5.5V
Note 1:
Absolute maximum ratings are values beyond which the device
may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2:
Either voltage limit or current limit is sufficient to protect inputs
DC Electrical Characteristics
Symbol
V
IH
V
IL
V
CD
V
OH
V
OL
I
IH
Parameter
Input HIGH Voltage
Input LOW Voltage
Input Clamp Diode Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Current
2.5
2.0
0.55
1
1
I
BVI
I
BVIT
I
IL
Input HIGH Current Breakdown Test
Input HIGH Current Breakdown Test (I/O)
Input LOW Current
7
100
−1
−1
V
ID
I
IH
+
I
OZH
I
IL
+
I
OZL
I
OS
I
CEX
I
ZZ
I
CCH
I
CCL
I
CCZ
I
CCT
Input Leakage Test
4.75
Min
2.0
0.8
−1.2
Typ
Max
Units
V
V
V
V
V
V
µA
µA
µA
µA
V
Min
Min
Min
Min
Max
Max
Max
Max
0.0
V
CC
Conditions
Recognized HIGH Signal
Recognized LOW Signal
I
IN
= −18
mA (OE, T/R)
I
OH
= −3
mA (A
n
, B
n
)
I
OH
= −32
mA (A
n
, B
n
)
I
OL
=
64 mA (A
n
, B
n
)
V
IN
=
2.7V (OE, T/R)
V
IN
=
V
CC
(OE, T/R)
V
IN
=
7.0V (OE, T/R)
V
IN
=
5.5V (A
n
, B
n
)
V
IN
=
0.5V (OE, T/R)
V
IN
=
0.0V (OE, T/R)
I
ID
=
1.9
µA
(OE, T/R)
All Other Pins Grounded
Output Leakage Current
Output Leakage Current
Output Short-Circuit Current
Output HIGH Leakage Current
Bus Drainage Test
Power Supply Current
Power Supply Current
Power Supply Current
−100
10
−10
−275
50
100
50
30
50
µA
µA
mA
µA
µA
µA
mA
µA
mA
mA
µA
mA/
MHz
Max
0
−
5.5V V
OUT
=
2.7V (A
n
, B
n
); OE
=
2.0V
0
−
5.5V V
OUT
=
0.5V (A
n
, B
n
); OE
=
2.0V
Max
Max
0.0
Max
Max
Max
V
OUT
=
0.0V (A
n
, B
n
)
V
OUT
=
V
CC
(A
n
, B
n
)
V
OUT
=
5.5V (A
n
, B
n
);
All Others GND
All Outputs HIGH
All Outputs LOW
OE
=
V
CC
, T/R
=
GND or V
CC
;
All Other GND or V
CC
Additional
I
CC
/Input
Outputs Enabled
Outputs 3-STATE
Outputs 3-STATE
I
CCD
Dynamic I
CC
No Load
2.5
2.5
50
0.1
V
I
=
V
CC
−
2.1V
OE, T/R V
I
=
V
CC
−
2.1V
Data Input V
I
=
V
CC
−
2.1V
All Others at V
CC
or GND.
Max
Outputs Open
OE
=
GND, T/R
=
GND or V
CC
One Bit Toggling, 50% Duty Cycle
3
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