KA5X0165RXX-SERIES
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter
rain-Source Breakdown Voltage
Symbol
BV
Condition
=0V, I =50µA
Min. Typ. Max. Unit
D
V
V
650
-
-
-
-
V
DSS
GS
DS
D
=Max. Rating, V =0V
GS
50
µA
Z
ero Gate Voltage Drain Current
I
DSS
V
V
=0.8Max. Rating,
DS
-
-
200
µA
=0V, T =125°C
GS
C
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
R
V
V
=10V, I =0.5A
D
-
8
-
10
-
Ω
DS(ON)
GS
DS
gfs
=50V, I =0.5A
D
0.5
S
Ciss
-
-
-
-
-
-
-
250
25
10
12
4
-
V
=0V, V =25V,
DS
GS
Output Capacitance
Coss
Crss
-
pF
nS
f=1MHz
Reverse Transfer Capacitance
Turn on Delay Time
-
td(on)
tr
-
V
=0.5B V
, I =1.0A
DSS
DD
D
Rise Time
-
(MOSFET switching time is
essentially independent of
operating temperature)
Turn Off Delay Time
td(off)
tf
30
10
-
Fall Time
-
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
=10V, I =1.0A,
D
GS
DS
Qg
-
-
21
=0.5B V
(MOSFET
DSS
switching time is essentially
independent of operating
temperature)
nC
Gate-Source Charge
Qgs
Qgd
-
-
3
9
-
-
Gate-Drain (Miller) Charge
Note:
1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
2.
1
R
S = ---
3
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
