4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
EMITTER
V
F
I
R
C
BV
CEO
BV
CBO
BV
ECO
I
CEO
h
FE
Input Forward Voltage*
Reverse Leakage Current*
Capacitance*
I
F
= 10mA
V
R
= 3.0V
V
F
= 0V, f = 1.0MHz
–
–
–
30
30
5.0
–
–
1.2
0.001
150
60
100
8
1
5000
1.5
100
–
–
–
–
100
–
V
µA
pF
V
V
V
nA
Test Conditions
Min.
Typ.
Max.
Unit
DETECTOR
Collector-Emitter Breakdown Voltage* I
C
= 1.0mA, I
B
= 0
Collector-Base Breakdown Voltage*
Collector-Emitter Dark Current*
DC Current Gain
I
C
= 100µA, I
E
= 0
V
CE
= 10V, Base Open
V
CE
= 5.0V, I
C
= 500µA
Emitter-Collector Breakdown Voltage* I
E
= 100µA, I
B
= 0
Transfer Characteristics
Symbol
Parameter
DC CHARACTERISTICS
I
C(CTR)
Test Conditions
Min.
Typ.
Max.
Unit
Collector Output Current*
(1, 2)
I
F
= 10mA, V
CE
= 10V, I
B
= 0
4N32, 4N33
4N29, 4N30
4N31
50 (500)
10 (100)
5 (50)
I
F
= 8mA, I
C
= 2.0mA
–
–
I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V
I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V
–
–
–
–
1.0
1.2
5.0
µS
V
–
–
–
–
–
–
mA (%)
V
CE(SAT)
Saturation Voltage*
(2)
4N29, 4N30, 4N32, 4N33
4N31
AC CHARACTERISTICS
t
on
t
off
Turn-on Time
Turn-off Time
4N32, 4N33
4N29, 4N30, 4N31
BW
Bandwidth
(3, 4)
–
–
–
–
–
30
100
40
–
µS
kHz
Isolation Characteristics
Symbol
V
ISO
Characteristic
Input-Output Isolation Voltage
(5)
4N29, 4N30, 4N31, 4N32, 4N33
4N32*
4N33*
Test Conditions
I
I-O
≤
1µA, Vrms, t = 1min.
VDC
VDC
Min.
5300
2500
1500
–
–
Typ.
–
–
–
10
11
0.8
Max.
–
–
–
–
–
Units
Vac(rms)
V
Ω
pF
R
ISO
C
ISO
Isolation
Isolation
Resistance
(5)
Capacitance
(5)
V
I-O
= 500VDC
V
I-O
= Ø, f = 1MHz
Notes:
* Indicates JEDEC registered data.
1. The current transfer ratio(I
C
/I
F
) is the ratio of the detector collector current to the LED input current with V
CE
@ 10V.
2. Pulse test: pulse width = 300µs, duty cycle
≤
2.0% .
4. I
F
adjusted to I
C
= 2.0mA and I
C
= 0.7mA rms.
5. The frequency at which I
C
is 3dB down from the 1kHz value.
6. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
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